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Ningbo Junxin Semiconductor Co., Ltd. is a high-tech enterprise specializing in the R&D, design, and sales of SiC MOSFET devices and modules. With a core R&D team, the company is committed to achieving independent control over key technologies for third-generation semiconductor power devices. Substantial breakthroughs have been made in critical SiC MOSFET technologies, covering the entire value chain from chip design and manufacturing processes to packaging testing and module design.
Why Choose Us Junxin?
Power Semiconductor Expert
Focused on the R&D and production of power MOSFETs, IGBTs, and other devices.
Strong technical expertise
Backed by a proprietary R&D team and multiple core technology patents
High-Efficiency Design
Low loss, high reliability for efficient system performance
Comprehensive Services
Technical support and customized solutions with fast response.
All Products
Co 20 unit| Model / Brand / Package | Specifications | Inventory | Batch | Price | Quantity | Action |
|---|---|---|---|---|---|---|
| JX0320R065MT3 Junxin | SiC MOSFET | TO-247-3 | Voltage: 65V, RDS(on)@25°C: 32mΩ, ID: 1A, VGS: 1V | In Stock | within two years | 1+ ¥3.0000 Volume discounts available | Total ¥3.00 | |
| JX3S0040R120MC Junxin | SiC MOSFET | TO-247-3L | Voltage: 1200V, RDS(on)@25°C: 43mΩ, ID: 60A, VGS: 18V | Small quantity | within two years | 1+ ¥9.0000 Volume discounts available | Total ¥9.00 | |
| JX3S0750170M Junxin | SiC MOSFET | TO-247-3 | Voltage: 1700V, RDS(on)@25°C: 75 mΩ, ID: 1 A, VGS: 1 V | In Stock | within two years | 1+ ¥20.0000 Volume discounts available | Total ¥20.00 | |
| JX3S0070R170M Junxin | SiC MOSFET | TO-247-3 | Voltage: 1700V, RDS(on)@25°C: 7 2mΩ, ID: 40A, VGS: 18V | In Stock | within two years | 1+ ¥25.0000 Volume discounts available | Total ¥25.00 | |
| JX200N650MEPF Junxin | SiC Power Module | MEP | VDS: 650V, RDS(on)@25°C: 6mΩ, ID: 200A | Small quantity | within two years | 1+ ¥150.0000 Volume discounts available | Total ¥150.00 | |
| JX300N1200MK3-A Junxin | SiC Power Module | MEP | VDS: 1200V, RDS(on)@25°C: 5.3mΩ, ID: 300A | Small quantity | within two years | 1+ ¥500.0000 Volume discounts available | Total ¥500.00 | |
| JX400N1200HPD Junxin | SiC Power Module | HPD | VDS: 1200V, RDS(on)@25°C: 4mΩ, ID: 400A | Small quantity | within two years | 1+ ¥1000.0000 Volume discounts available | Total ¥1000.00 | |
| JX400N1700MK4 Junxin | SiC Power Module | MED | VDS: 1700V, RDS(on)@25°C: 6.5mΩ, ID: 400A | Small quantity | within two years | 1+ ¥1000.0000 Volume discounts available | Total ¥1000.00 | |
| JX600N1700MK4 Junxin | SiC Power Module | MED | VDS: 1700V, RDS(on)@25°C: 4.3mΩ, ID: 600A | Small quantity | within two years | 1+ ¥1500.0000 Volume discounts available | Total ¥1500.00 | |
| JX600N1200HPD Junxin | SiC Power Module | HPD | VDS: 1200V, RDS(on)@25°C: 2.7mΩ, ID: 60A | Small quantity | within two years | 1+ ¥3000.0000 Volume discounts available | Total ¥3000.00 |