ZenChip
Electronic Components
JX4S0020120M
JX4S0020120M
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect TransistorPrice Tiers (Tax Included)
1 pcs
30 pcs
In 2 years
Download Datasheet
Package Specifications
TO-247
3
15.87mm
20.8mm
5.3mm
5.45mm
High-power packaging
Product Specifications
| RDS(on) @ 25°C | 16 mΩ |
| ID | 100A |
| Gate-to-Source Voltage | 18V |
| Voltage | 120V |
Product Description

JX
--
8/5/2026
Related Products
SCTW100N120G2
ST | Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor | TO-247-3
Inquiry
Alternative modelC3M0016120D
Wolfspeed | Silicon Carbide MOSFET | TO-247-3
Inquiry
Alternative modelIMW120R016M1
Infineon | Silicon Carbide MOSFET | TO-247-3
Inquiry
NTH60N120SC1-4L
ON | Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor | TO-247-4L
Inquiry
SCTW60N65G2K
ST | Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor | TO-247-4
Inquiry
C2M0080120D
Wolfspeed | Silicon Carbide MOSFET | TO-247-3
Inquiry
SCTW35N120G2
ST | Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor | TO-247-3
Inquiry
E3M0016120D
Wolfspeed | Silicon Carbide MOSFET | TO-247-3
Inquiry
SCTW60N65G2
ST | Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor | TO-247-3
Inquiry