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Electronic Components
JX3S0020120M
JX3S0020120M
Silicon Carbide Metal-Oxide-Semiconductor Field-Effect TransistorPrice Tiers (Tax Included)
1 pcs
30 pcs
In 2 years
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Product Specifications
| RDS(on) @ 25°C | 16 mΩ |
| ID | 100A |
| Gate-to-Source Voltage | 18V |
| Voltage | 120V |
Product Description
JX
--
8/5/2026
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