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JX3S0020120M
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JXTO-247-3In stock
JX3S0020120M
SiC MOSFETPrice levels (including tax)
1+¥18.0000
Min. order
1 pcs.
Min. pack
30 pcs.
Batch
For 2 years
Quantity:
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Product Parameters
| RDS(on) at 25°C | 16 mΩ |
| Identifier | 100A |
| Gate-Source Voltage | 18V |
| Voltage | 120V |
Product Description
Высокомощный преобразователь для систем накопления энергии
Ningbo JX Semiconductor Co., Ltd. is a high-tech company specializing in the R&D, design, and sales of SiC MOSFET devices and modules. Our core development team is dedicated to achieving independent control over key technologies for third-generation power semiconductors. We have made significant breakthroughs in SiC MOSFET core technologies spanning the entire production chain: chip design, manufacturing processes, packaging and testing, and module design.
Brand name
JX
Product count
--
Update time
05.08.2026
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